3-DIMENSIONAL MONTE-CARLO SIMULATIONS .2. RECOIL PHENOMENA

被引：14

作者：

MAZZONE, AM

机构：

[1] CNR, Bologna, Italy, CNR, Bologna, Italy

来源：

关键词：

D O I：

10.1109/TCAD.1985.1270103

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：110 / 117

页数：8

共 22 条

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[2] ALEXANDER RB, 1971, UKAEA AERE R6849 REP
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[4] RADIATION-DAMAGE IN SILICON PRODUCED BY PHOSPHORUS IMPLANTATION - RANDOM AND ALIGNED IMPLANTS
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[5] RECOIL RANGE DISTRIBUTIONS IN MULTILAYERED TARGETS
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[J]. NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 187 - 198
[6] CHRISTEL LA, 1981, NUCL I METH, P182
[7] MONTE-CARLO CALCULATIONS ON SPATIAL-DISTRIBUTION OF IMPLANTED IONS IN SILICON
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[8] DOSE DEPENDENCE OF PENETRATION AND DAMAGE PROFILES OF P+-CHANNELED IONS IN SILICON SIMULATED BY COMPUTER
DESALVO, A
ROSA, R
ZIGNANI, F
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 27 (1-2): : 89 - 95
[9] ION-BEAM INDUCED ATOMIC MIXING AT THE SIO2/SI INTERFACE STUDIED BY MEANS OF MONTE-CARLO SIMULATION
FERRIEU, F
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[10] HIRAO T, 1979, J APPL PHYS, V50