DOSE DEPENDENCE OF PENETRATION AND DAMAGE PROFILES OF P+-CHANNELED IONS IN SILICON SIMULATED BY COMPUTER

被引：14

作者：

DESALVO, A

ROSA, R

ZIGNANI, F

机构：

[1] UNIV BOLOGNA,FAC INGN,IST CHIM,BOLOGNA,ITALY

[2] CNR,LAB LAMEL,VIA CASTAGNOLI 1,40126 BOLOGNA,ITALY

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1975年 / 27卷 / 1-2期

关键词：

D O I：

10.1080/00337577508233013

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：89 / 95

页数：7

共 16 条

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CEMBALI, F ;

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MOUSTY, F ;

ROSA, R ;

ZIGNANI, F .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1974, 21 (04) :255-264

[3]

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[4]

CHADDERTON LT, 1965, RADIATION DAMAGE CRY, P30

[5]

Crowder B. L., 1970, Radiation Effects, V6, P63, DOI 10.1080/00337577008235047

[6] COMPUTER EVALUATION OF PRIMARY DEPOSITED ENERGY PROFILES IN ION-IMPLANTED SILICON UNDER CHANNELING CONDITIONS [J].

DESALVO, A ;

ROSA, R ;

ZIGNANI, F .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) :3755-&

[7] PECULIARITIES OF SILICON AMORPHIZATION AT ION-BOMBARDMENT [J].

GERASIMOV, AI ;

ZORIN, EI ;

TETELBAUM, DI ;

PAVLOV, PV .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 12 (02) :679-+

[8]

GRIGOROVICI R, 1967, THIN SOLID FILMS, V1, P343

[9]

GUSEV VM, 1970, 1969 P INT C AT COLL, P162

[10]

JOHNSON WS, 1969, PROJECTED RANGE STAT

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