MONTE-CARLO CALCULATIONS ON SPATIAL-DISTRIBUTION OF IMPLANTED IONS IN SILICON

被引：14

作者：

DESALVO, A

ROSA, R

机构：

[1] CNR,LA EL LAB,I-40126 BOLOGNA,ITALY

[2] UNIV BOLOGNA,FAC INGN,IST CHIM,I-40126 BOLOGNA,ITALY

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1976年 / 31卷 / 01期

关键词：

D O I：

10.1080/00337577608234778

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：41 / 45

页数：5

共 24 条

[1] ALEXANDER RB, 1971, R6849 AERE UKAEA REP
[2] BOLON RB, 1975, PRACTICAL SCANNING E, P299
[3] BRICE DK, 1973, 3RD P INT C ION IMPL, P171
[4] BRICE DK, 1975, ION IMPLANTATION RAN, V1
[5] COMBASSON JL, 1973, 3RD P INT C ION IMPL, P285
[6] INFLUENCE OF AMORPHOUS PHASE ON ION DISTRIBUTIONS AND ANNEALING BEHAVIOR OF GROUP III AND GROUP V IONS IMPLANTED INTO SILICON
CROWDER, BL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (06) : 943 - &
[7] CROWDER BL, 1973, 3RD P INT C ION IMPL, P257
[8] MULTIPLE-SCATTERING AND CENTRAL LIMIT THEOREM - MONTE-CARLO APPROACH
DESALVO, A
ROSA, R
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 69 (01): : 71 - 78
[9] DOSE DEPENDENCE OF PENETRATION AND DAMAGE PROFILES OF P+-CHANNELED IONS IN SILICON SIMULATED BY COMPUTER
DESALVO, A
ROSA, R
ZIGNANI, F
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 27 (1-2): : 89 - 95
[10] COMPUTER EVALUATION OF PRIMARY DEPOSITED ENERGY PROFILES IN ION-IMPLANTED SILICON UNDER CHANNELING CONDITIONS
DESALVO, A
ROSA, R
ZIGNANI, F
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) : 3755 - &