SHALLOW BORON-DOPED JUNCTIONS IN SILICON

被引：29

作者：

COHEN, SS ^{[1
]}

NORTON, JF ^{[1
]}

KOCH, EF ^{[1
]}

WEISEL, GJ ^{[1
]}

机构：

[1] GE, RES TRIANGLE PK, NC 27709 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 04期

关键词：

D O I：

10.1063/1.334517

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1200 / 1213

页数：14

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