SHALLOW BORON-DOPED JUNCTIONS IN SILICON

被引：29

作者：

COHEN, SS ^{[1
]}

NORTON, JF ^{[1
]}

KOCH, EF ^{[1
]}

WEISEL, GJ ^{[1
]}

机构：

[1] GE, RES TRIANGLE PK, NC 27709 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 04期

关键词：

D O I：

10.1063/1.334517

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1200 / 1213

页数：14

相关论文

共 28 条

[21] MOS THRESHOLD SHIFTING BY ION-IMPLANTATION
SIGMON, TW
SWANSON, R
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (11) : 1217 - 1232
[22] ANOMALOUS BORON PROFILES PRODUCED BY BF2 IMPLANTATION INTO SILICON
SIGMON, TW
DELINE, VR
EVANS, CA
KATZ, WM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (04) : 981 - 982
[23] FORMATION OF SELF-DISORDER AGGLOMERATES IN DISLOCATION-FREE SILICON DURING CRYSTAL-GROWTH
TEMPELHOFF, K
VANSUNG, N
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 70 (02): : 441 - 449
[24] THURBER WR, 1981, NBS40064 SPEC PUBL
[25] ANOMALOUS MIGRATION OF FLUORINE AND ELECTRICAL ACTIVATION OF BORON IN BF-2+-IMPLANTED SILICON
TSAI, MY
STREETMAN, BG
WILLIAMS, P
EVANS, CA
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (03) : 144 - 147
[26] RECRYSTALLIZATION OF IMPLANTED AMORPHOUS SILICON LAYERS .2. MIGRATION OF FLUORINE IN BF2+-IMPLANTED SILICON
TSAI, MY
DAY, DS
STREETMAN, BG
WILLIAMS, P
EVANS, CA
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 188 - 192
[27] ARSENIC ION-IMPLANTED SHALLOW JUNCTION
WADA, Y
HASHIMOTO, N
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) : 461 - 466
[28] BORON, FLUORINE, AND CARRIER PROFILES FOR B AND BF2 IMPLANTS INTO CRYSTALLINE AND AMORPHOUS SI
WILSON, RG
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 6879 - 6889