DEGRADATION OF CARRIER LIFETIME IN SILICON-CRYSTALS AT ROOM-TEMPERATURE

被引：14

作者：

GRAFF, K

PIEPER, H

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1978年 / 49卷 / 01期

关键词：

D O I：

10.1002/pssa.2210490116

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：137 / 144

页数：8

共 14 条

[1]

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BUCK, TM ;

HSIEH, CM ;

POATE, JM ;

PICKAR, KA .

APPLIED PHYSICS LETTERS, 1972, 21 (10) :485-&

[3]

DEKOCK AJR, 1973, PHILIPS RES REP S, V1, P9

[4]

DIETZE W, 1977, MAY SPRING M EL SOC

[5]

FAIR RB, 1977, SEMICONDUCTOR SILICO, P968

[6] GOLD AS A RECOMBINATION CENTRE IN SILICON [J].

FAIRFIELD, JM ;

GOKHALE, BV .

SOLID-STATE ELECTRONICS, 1965, 8 (08) :685-+

[7] METAL PRECIPITATES IN SILICON P-N JUNCTIONS [J].

GOETZBERGER, A ;

SHOCKLEY, W .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) :1821-1824

[8] CARRIER LIFETIME MEASUREMENTS ON ELECTRON-IRRADIATED SILICON-CRYSTALS [J].

GRAFF, K ;

PIEPER, H .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 30 (02) :593-599

[9]

GRAFF K, 1973, SEMICONDUCTOR SILICO, P170

[10]

KERN W, 1970, RCA REV, V31, P187

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