RAPID ANNEALING USING HALOGEN LAMPS

[1] STRESSES GENERATED BY THE THERMOMIGRATION OF LIQUID INCLUSIONS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) : 5774 - 5782

[2] APPELS JA, 1970, PHILIPS RES REP, V25, P118

[3] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4234 - 4240

[4] MOSI2 FORMATION BY RAPID ISOTHERMAL ANNEALING [J]. ELECTRON DEVICE LETTERS, 1982, 3 (07): : 179 - 181

[5] RAPID ISOTHERMAL ANNEALING OF ION-IMPLANTATION DAMAGE USING A THERMAL-RADIATION SOURCE [J]. APPLIED PHYSICS LETTERS, 1981, 39 (08) : 604 - 606

[6] Iwamatsu S., 1982, Journal of the Vacuum Society of Japan, V25, P735, DOI 10.3131/jvsj.25.735

[7] IWAMATSU S, 1982, ELECTROCHEMICAL SOC, P348

[8] KIMERLING LC, 1980, LASER ELECTRON BEAM, P385

[9] ARC ANNEALING OF BF+2 IMPLANTED SILICON BY A SHORT PULSE FLASH LAMP [J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 73 - 76

[10] ANNEALING PROPERTIES OF ION-IMPLANTED PARANORMAL JUNCTIONS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 2991 - 2996

[1] STRESSES GENERATED BY THE THERMOMIGRATION OF LIQUID INCLUSIONS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) : 5774 - 5782

[2] APPELS JA, 1970, PHILIPS RES REP, V25, P118

[3] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4234 - 4240

[4] MOSI2 FORMATION BY RAPID ISOTHERMAL ANNEALING [J]. ELECTRON DEVICE LETTERS, 1982, 3 (07): : 179 - 181

[5] RAPID ISOTHERMAL ANNEALING OF ION-IMPLANTATION DAMAGE USING A THERMAL-RADIATION SOURCE [J]. APPLIED PHYSICS LETTERS, 1981, 39 (08) : 604 - 606

[6] Iwamatsu S., 1982, Journal of the Vacuum Society of Japan, V25, P735, DOI 10.3131/jvsj.25.735

[7] IWAMATSU S, 1982, ELECTROCHEMICAL SOC, P348

[8] KIMERLING LC, 1980, LASER ELECTRON BEAM, P385

[9] ARC ANNEALING OF BF+2 IMPLANTED SILICON BY A SHORT PULSE FLASH LAMP [J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 73 - 76

[10] ANNEALING PROPERTIES OF ION-IMPLANTED PARANORMAL JUNCTIONS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 2991 - 2996