ARC ANNEALING OF BF+2 IMPLANTED SILICON BY A SHORT PULSE FLASH LAMP

被引：24

作者：

LUE, JT

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 01期

关键词：

D O I：

10.1063/1.91279

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：73 / 76

页数：4

共 12 条

[1] PROPERTIES OF LASER-ASSISTED DOPING IN SILICON [J].

AFFOLTER, K ;

LUTHY, W ;

VONALLMEN, M .

APPLIED PHYSICS LETTERS, 1978, 33 (02) :185-187

[2] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J].

BAERI, P ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :788-797

[3]

BOMBE HA, 1978, APPL PHYS LETT, V33, P955

[4] THERMALLY ASSISTED FLASH ANNEALING OF SILICON AND GERMANIUM [J].

COHEN, RL ;

WILLIAMS, JS ;

FELDMAN, LC ;

WEST, KW .

APPLIED PHYSICS LETTERS, 1978, 33 (08) :751-753

[5] CRYSTALLINE TO AMORPHOUS TRANSFORMATION IN ION-IMPLANTED SILICON - COMPOSITE MODEL [J].

DENNIS, JR ;

HALE, EB .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (03) :1119-1127

[6]

MAROTTA A, 1978, APPL PHYS LETT, V33, P15

[7] COMPUTER-SIMULATION OF LASER ANNEALING SILICON AT 1.06 MU-M [J].

SCHULTZ, JC ;

COLLINS, RJ .

APPLIED PHYSICS LETTERS, 1979, 34 (01) :84-87

[8]

SEIDEL TE, 1971, RAD EFF, V7

[9]

SONG DY, UNPUBLISHED

[10]

SZE SM, 1969, PHYSICS SEMICONDUCTO, P104

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