THERMALLY ASSISTED FLASH ANNEALING OF SILICON AND GERMANIUM

[1] AUSTON H, 1978, APPL PHYS LETT, V33, P539

[2] CHEZ RA, 1975, J APPL PHYS, V46, P2103

[3] CSEPREGI L, 1977, J APPL PHYS, V48, P10

[4] EDGERTON HE, 1970, ELECTRONIC FLASH STR

[5] PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 276 - 278

[6] KACHURIN GA, 1976, SOV PHYS SEMICOND, V9, P946

[7] KLIMENKO AG, 1976, SOV J QUANTUM ELECTR, V5, P1289

[8] Morgan D.V., 1973, CHANNELING THEORY OB

[9] INTENSE RAPID HEATING WITH FLASH DISCHARGE LAMPS [J]. SCIENCE, 1962, 136 (3513) : 296 - &

[10] SOLID-PHASE EPITAXY OF IMPLANTED SILICON BY CW AR ION LASER IRRADIATION [J]. APPLIED PHYSICS LETTERS, 1978, 33 (06) : 542 - 544

[1] AUSTON H, 1978, APPL PHYS LETT, V33, P539

[2] CHEZ RA, 1975, J APPL PHYS, V46, P2103

[3] CSEPREGI L, 1977, J APPL PHYS, V48, P10

[4] EDGERTON HE, 1970, ELECTRONIC FLASH STR

[5] PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 276 - 278

[6] KACHURIN GA, 1976, SOV PHYS SEMICOND, V9, P946

[7] KLIMENKO AG, 1976, SOV J QUANTUM ELECTR, V5, P1289

[8] Morgan D.V., 1973, CHANNELING THEORY OB

[9] INTENSE RAPID HEATING WITH FLASH DISCHARGE LAMPS [J]. SCIENCE, 1962, 136 (3513) : 296 - &

[10] SOLID-PHASE EPITAXY OF IMPLANTED SILICON BY CW AR ION LASER IRRADIATION [J]. APPLIED PHYSICS LETTERS, 1978, 33 (06) : 542 - 544