RAPID ISOTHERMAL ANNEALING OF ION-IMPLANTATION DAMAGE USING A THERMAL-RADIATION SOURCE

[1] LATERAL EPITAXY BY SEEDED SOLIDIFICATION FOR GROWTH OF SINGLE-CRYSTAL SI FILMS ON INSULATORS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 365 - 367

[2] FERRIS SD, 1979, 1978 AIP C P

[3] Fistul' V.I., 1969, HEAVILY DOPED SEMICO, VVolume 1

[4] FULKS RT, 1981, 23RD ANN EL MAT C SA

[5] Hill C., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P361

[6] ELECTRON-BEAM ANNEALING OF ION-IMPLANTATION DAMAGE IN INTEGRATED-CIRCUIT DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) : 1308 - 1311

[7] SOLAR FURNACE ANNEALING OF AMORPHOUS SI LAYERS [J]. APPLIED PHYSICS LETTERS, 1979, 35 (04) : 327 - 329

[8] THE SOLID SOLUBILITY AND THERMAL-BEHAVIOR OF METASTABLE CONCENTRATIONS OF AS IN SI [J]. APPLIED PHYSICS LETTERS, 1980, 36 (09) : 765 - 768

[9] RADIATION ANNEALING OF BORON-IMPLANTED SILICON WITH A HALOGEN LAMP [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) : L563 - L566

[10] ACTIVATION OF ARSENIC-IMPLANTED SILICON USING AN INCOHERENT-LIGHT SOURCE [J]. APPLIED PHYSICS LETTERS, 1981, 39 (02) : 150 - 152

[1] LATERAL EPITAXY BY SEEDED SOLIDIFICATION FOR GROWTH OF SINGLE-CRYSTAL SI FILMS ON INSULATORS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 365 - 367

[2] FERRIS SD, 1979, 1978 AIP C P

[3] Fistul' V.I., 1969, HEAVILY DOPED SEMICO, VVolume 1

[4] FULKS RT, 1981, 23RD ANN EL MAT C SA

[5] Hill C., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P361

[6] ELECTRON-BEAM ANNEALING OF ION-IMPLANTATION DAMAGE IN INTEGRATED-CIRCUIT DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) : 1308 - 1311

[7] SOLAR FURNACE ANNEALING OF AMORPHOUS SI LAYERS [J]. APPLIED PHYSICS LETTERS, 1979, 35 (04) : 327 - 329

[8] THE SOLID SOLUBILITY AND THERMAL-BEHAVIOR OF METASTABLE CONCENTRATIONS OF AS IN SI [J]. APPLIED PHYSICS LETTERS, 1980, 36 (09) : 765 - 768

[9] RADIATION ANNEALING OF BORON-IMPLANTED SILICON WITH A HALOGEN LAMP [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) : L563 - L566

[10] ACTIVATION OF ARSENIC-IMPLANTED SILICON USING AN INCOHERENT-LIGHT SOURCE [J]. APPLIED PHYSICS LETTERS, 1981, 39 (02) : 150 - 152