LATTICE DAMAGE, BORON-DIFFUSION, AND DOPANT ACTIVATION IN BF2 IMPLANTED LAYERS

The properties of boron-doped silicon layers obtained by ion implantation using BF//2** plus molecular ions are studied with Rutherford backscattering spectrometry, transmission electron microscopy, secondary ion mass spectrometry, and with incremental sheet resistance and sheet Hall coefficient measurements by the anodic sectioning method. The implantation step is responsible for the formation of interstitial aggregates at the amorphous/crystal interface. The size of these aggregates, and hence the total number of defects involved, depends on the implant conditions, and is different for samples implanted in the two systems used (a medium current and a high current implanter).