THE NATURE OF DEFECT LAYER FORMATION FOR ARSENIC ION-IMPLANTATION

[1] NEW MODEL TO EXPLAIN COLORS GENERATED ON SURFACE OF ION-IMPLANTED SILICON WAFERS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 33 (04): : 219 - 220

[2] CROWDER BL, 1971, ION IMPLANTATION, P87

[3] DISORDER PRODUCED BY HIGH-DOSE IMPLANTATION IN SI [J]. APPLIED PHYSICS LETTERS, 1976, 29 (10) : 645 - 648

[4] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 92 - 93

[5] FLETCHER J, 1980, FAL M EL SOC HOLL, P1155

[6] FREEMAN JH, 1970, 4TH P INT C ION IMPL

[7] FREEMAN JH, 1970, 1970 EUR C ION IMPL, P1

[8] GOLECKI I, 1979, SPR EL SOC M BOST, P305

[9] HIGH-FLUENCE IMPLANTATIONS OF SILICON - LAYER THICKNESS AND REFRACTIVE-INDEXES [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3294 - 3303

[10] CORRELATION BETWEEN LATTICE DAMAGE AND ELECTRICAL ACTIVATION OF PHOSPHORUS-IMPLANTED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) : 2573 - 2575

[1] NEW MODEL TO EXPLAIN COLORS GENERATED ON SURFACE OF ION-IMPLANTED SILICON WAFERS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 33 (04): : 219 - 220

[2] CROWDER BL, 1971, ION IMPLANTATION, P87

[3] DISORDER PRODUCED BY HIGH-DOSE IMPLANTATION IN SI [J]. APPLIED PHYSICS LETTERS, 1976, 29 (10) : 645 - 648

[4] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 92 - 93

[5] FLETCHER J, 1980, FAL M EL SOC HOLL, P1155

[6] FREEMAN JH, 1970, 4TH P INT C ION IMPL

[7] FREEMAN JH, 1970, 1970 EUR C ION IMPL, P1

[8] GOLECKI I, 1979, SPR EL SOC M BOST, P305

[9] HIGH-FLUENCE IMPLANTATIONS OF SILICON - LAYER THICKNESS AND REFRACTIVE-INDEXES [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3294 - 3303

[10] CORRELATION BETWEEN LATTICE DAMAGE AND ELECTRICAL ACTIVATION OF PHOSPHORUS-IMPLANTED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) : 2573 - 2575