NEW MODEL TO EXPLAIN COLORS GENERATED ON SURFACE OF ION-IMPLANTED SILICON WAFERS

被引：11

作者：

BEANLAND, DG ^{[1
]}

机构：

[1] ROYAL MELBOURNE INST TECHNOL,MELBOURNE,AUSTRALIA

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1977年 / 33卷 / 04期

关键词：

D O I：

10.1080/00337577708233110

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：219 / 220

页数：2

共 10 条

[1] Baranova E. C., 1973, ION IMPLANTATION SEM, P59
[2] STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS
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TITLE, RS
WEISER, K
PETTIT, GD
[J]. PHYSICAL REVIEW B, 1970, 1 (06): : 2632 - &
[3] DITCHBURN RW, 1963, LIGHT
[4] FREEMAN JH, 1975, ION IMPLANTATION SEM, P555
[5] OPTICAL REFLECTION STUDIES OF DAMAGE IN ION IMPLANTED SILICON
MCGILL, TC
KURTIN, SL
SHIFRIN, GA
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) : 246 - +
[6] Morehead F. F. Jr., 1970, Radiation Effects, V6, P27, DOI 10.1080/00337577008235042
[7] INFLUENCE OF TEMPERATURE AND CHANNELING ON ION-BOMBARDMENT DAMAGE IN SI
NELSON, RS
MAZEY, DJ
[J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 689 - &
[8] TARGET HEATING DURING ION-IMPLANTATION
PARRY, PD
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (02): : 622 - 629
[9] VISIBLE INTERFERENCE EFFECTS IN SILICON CAUSED BY HIGH-CURRENT-HIGH-DOSE IMPLANTATION
SEIDEL, TE
PASTEUR, GA
TSAI, JCC
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (10) : 648 - 651
[10] WINTERBON KB, 1970, MATT FYS MEDD, V37