CORRELATION BETWEEN LATTICE DAMAGE AND ELECTRICAL ACTIVATION OF PHOSPHORUS-IMPLANTED SILICON

被引：20

作者：

MIYAO, M ^{[1
]}

YOSHIHIRO, N ^{[1
]}

TOKUYAMA, T ^{[1
]}

MITSUISHI, T ^{[1
]}

机构：

[1] GUNMA UNIV,FAC TECHNOL,GUNMA 376,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 04期

关键词：

D O I：

10.1063/1.325070

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2573 / 2575

页数：3

共 13 条

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[2] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON
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[J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 92 - 93
[3] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI
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MAYER, JW
SIGMON, TW
[J]. PHYSICS LETTERS A, 1975, 54 (02) : 157 - 158
[4] ION IMPLANTATION IN SEMICONDUCTORS .2. DAMAGE PRODUCTION AND ANNEALING
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[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09): : 1062 - &
[5] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON
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[J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +
[6] KENNEDY EF, 1976, 5TH P INT C ION IMPL
[7] ANNEALING BEHAVIOR OF PHOSPHORUS IMPLANTED SILICON-CRYSTALS
MITSUISHI, T
SASAKI, Y
ASAMI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (02) : 367 - 368
[8] MITSUISHI T, UNPUBLISHED
[9] LOW-TEMPERATURE ANNEALING CHARACTERISTICS OF PHOSPHORUS-IMPLANTED SILICON
MIYAO, M
NATSUAKI, N
YOSHIHIRO, N
TAMURA, M
TOKUYAMA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 : 57 - 62
[10] FORMATION OF AMORPHOUS SILICON BY ION-BOMBARDMENT AS A FUNCTION OF ION, TEMPERATURE, AND DOSE
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CROWDER, BL
TITLE, RS
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) : 1112 - &

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