LOW-TEMPERATURE ANNEALING CHARACTERISTICS OF PHOSPHORUS-IMPLANTED SILICON

被引：8

作者：

MIYAO, M ^{[1
]}

NATSUAKI, N ^{[1
]}

YOSHIHIRO, N ^{[1
]}

TAMURA, M ^{[1
]}

TOKUYAMA, T ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1976年 / 15卷

关键词：

D O I：

10.7567/JJAPS.15S1.57

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：57 / 62

页数：6

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