SPATIAL DISTRIBUTION OF ENERGY DEPOSITED BY ENERGETIC HEAVEY IONS IN SEMICONDUCTORS

被引:31
作者
TSURUSHIMA, T
TANOUE, H
机构
关键词
D O I
10.1143/JPSJ.31.1695
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1695 / +
页数:1
相关论文
共 33 条
[1]   MESSUNG DER ENERGIE ZUR VERLAGERUNG EINES GITTERATOMS DURCH ELEKTRONENSTOB IN AIIIBV-VERBINDUNGEN [J].
BAUERLEIN, R .
ZEITSCHRIFT FUR PHYSIK, 1963, 176 (04) :498-&
[3]  
BRICE DK, 1970, MAY INT C ION IMPL S
[4]   ANNEALING CHARACTERISTICS OF N-TYPE DOPANTS IN ION-IMPLANTED SILICON [J].
CROWDER, BL ;
MOREHEAD, FF .
APPLIED PHYSICS LETTERS, 1969, 14 (10) :313-&
[5]  
CROWDER BL, 1970, MAY INT C ION IMPL S
[6]   ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J].
DAVIES, JA ;
DENHARTO.J ;
ERIKSSON, L ;
MAYER, JW .
CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) :4053-&
[7]   ION BOMBARDMENT AND IMPLANTATION [J].
DEARNALEY, G .
REPORTS ON PROGRESS IN PHYSICS, 1969, 32 (04) :405-+
[8]  
Della Mea G., 1970, Radiation Effects, V3, P259, DOI 10.1080/00337577008236283
[9]  
DELLAMEA G, 1970, APPL PHYS LETT, V16, P382, DOI 10.1063/1.1653034
[10]  
ERIKSSON L, 1968, RADIATION EFFECTS SE, P398