FORMATION OF AMORPHOUS SILICON BY ION-BOMBARDMENT AS A FUNCTION OF ION, TEMPERATURE, AND DOSE

被引：111

作者：

MOREHEAD, FF

CROWDER, BL

TITLE, RS

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 03期

关键词：

D O I：

10.1063/1.1661223

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1112 / &

共 22 条

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[6] ANNEALING CHARACTERISTICS OF N-TYPE DOPANTS IN ION-IMPLANTED SILICON [J].

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MOREHEAD, FF .

APPLIED PHYSICS LETTERS, 1969, 14 (10) :313-&

[7] ROLE OF DAMAGE IN ANNEALING CHARACTERISTICS OF ION IMPLANTED SI [J].

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[8] ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON [J].

CROWDER, BL ;

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PETTIT, GD .

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[9]

CROWDER BL, UNPUBLISHED

[10]

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