ANNEALING BEHAVIOR OF PHOSPHORUS IMPLANTED SILICON-CRYSTALS

被引:7
作者
MITSUISHI, T [1 ]
SASAKI, Y [1 ]
ASAMI, H [1 ]
机构
[1] GUNMA UNIV,FAC TECHNOL,GUNMA,JAPAN
关键词
D O I
10.1143/JJAP.16.367
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:367 / 368
页数:2
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