THE NATURE OF DEFECT LAYER FORMATION FOR ARSENIC ION-IMPLANTATION

[11] MOREHEAD FF, 1971, ION IMPLANTATION, P25

[12] Morgan D V, 1973, CHANNELING

[13] NOVEL LOW-TEMPERATURE RECRYSTALLIZATION OF AMORPHOUS-SILICON BY HIGH-ENERGY ION-BEAM [J]. APPLIED PHYSICS LETTERS, 1982, 40 (08) : 686 - 688

[14] TARGET HEATING DURING ION-IMPLANTATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (02): : 622 - 629

[15] ROLE OF SEQUENTIAL ANNEALING, OXIDATION, AND DIFFUSION UPON DEFECT GENERATION IN ION-IMPLANTED SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1635 - 1642

[16] JUNCTION DEPTH MEASUREMENT FOR VLSI STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (01) : 184 - 187

[17] PRUSSIN S, UNPUB

[18] TRANSMISSION ELECTRON-MICROSCOPY AND RUTHERFORD BACKSCATTERING STUDIES DIFFERENT DAMAGE STRUCTURES IN P+ IMPLANTED SI [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) : 5718 - 5724

[19] EFFECT ON ELECTRICAL-PROPERTIES OF SEGREGATION OF IMPLANTED P+ AT DEFECT SITES IN SI [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 615 - 618

[20] SEDGWICK TD, 1982, VLSI SCI TECHNOLOGY, P130

[11] MOREHEAD FF, 1971, ION IMPLANTATION, P25

[12] Morgan D V, 1973, CHANNELING

[13] NOVEL LOW-TEMPERATURE RECRYSTALLIZATION OF AMORPHOUS-SILICON BY HIGH-ENERGY ION-BEAM [J]. APPLIED PHYSICS LETTERS, 1982, 40 (08) : 686 - 688

[14] TARGET HEATING DURING ION-IMPLANTATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (02): : 622 - 629

[15] ROLE OF SEQUENTIAL ANNEALING, OXIDATION, AND DIFFUSION UPON DEFECT GENERATION IN ION-IMPLANTED SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1635 - 1642

[16] JUNCTION DEPTH MEASUREMENT FOR VLSI STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (01) : 184 - 187

[17] PRUSSIN S, UNPUB

[18] TRANSMISSION ELECTRON-MICROSCOPY AND RUTHERFORD BACKSCATTERING STUDIES DIFFERENT DAMAGE STRUCTURES IN P+ IMPLANTED SI [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) : 5718 - 5724

[19] EFFECT ON ELECTRICAL-PROPERTIES OF SEGREGATION OF IMPLANTED P+ AT DEFECT SITES IN SI [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 615 - 618

[20] SEDGWICK TD, 1982, VLSI SCI TECHNOLOGY, P130