TRANSMISSION ELECTRON-MICROSCOPY AND RUTHERFORD BACKSCATTERING STUDIES DIFFERENT DAMAGE STRUCTURES IN P+ IMPLANTED SI

被引：18

作者：

SADANA, DK ^{[1
]}

STRATHAM, M ^{[1
]}

WASHBURN, J ^{[1
]}

BOOKER, GR ^{[1
]}

机构：

[1] UNIV OXFORD,DEPT MET,OXFORD OX1 3PH,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 11期

关键词：

D O I：

10.1063/1.327579

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5718 / 5724

页数：7

共 10 条

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[2]

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SIGMON, TW .

APPLIED PHYSICS LETTERS, 1976, 29 (10) :645-648

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[5]

FREEMAN JH, 1970, P C ION IMPLANTATION

[6]

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[7] ENERGY STRAGGLING OF HE-4 IONS BELOW 2.0 MEV IN AL, NI, AND AU [J].

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NICOLET, MA .

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[8]

PETTIT HR, 1971, I PHYS C SER, V10, P290

[9] VISIBLE INTERFERENCE EFFECTS IN SILICON CAUSED BY HIGH-CURRENT-HIGH-DOSE IMPLANTATION [J].

SEIDEL, TE ;

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APPLIED PHYSICS LETTERS, 1976, 29 (10) :648-651

[10]

STRATHMAN M, UNPUBLISHED

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