PLANAR CHANNELING EFFECTS IN A BATCH PROCESS ION IMPLANTER

[1] Blunt R. T., 1983, Ion Implantation: Equipment and Techniques. Proceedings of the Fourth International Conference, P443

[2] PLANAR CHANNELING EFFECTS IN SI(100) [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 6 (1-2) : 336 - 348

[3] A TECHNIQUE FOR OPTIMIZING THE DOSE UNIFORMITY OF A MAGNETIC SCANNING HIGH-CURRENT IMPLANTER [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 6 (1-2) : 228 - 236

[4] APPLICATIONS OF MAGNETIC SCANNING TO HIGH-CURRENT IMPLANTATION [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (02) : 1747 - 1750

[5] PERFORMANCE-CHARACTERISTICS OF THE EXTRION 160-10 ION-IMPLANTATION SYSTEM [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 6 (1-2) : 16 - 26

[6] CHANNELING EFFECT OF LOW-ENERGY BORON IMPLANT IN (100) SILICON [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (03) : 59 - 62

[7] CHANNELING IN LOW-ENERGY BORON ION-IMPLANTATION [J]. APPLIED PHYSICS LETTERS, 1984, 44 (04) : 404 - 406

[8] INCIDENCE ANGLE DEPENDENCE OF PLANAR CHANNELING IN BORON ION-IMPLANTATION INTO SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : 716 - 719

[9] CONSIDERATIONS OF ION CHANNELING FOR SEMICONDUCTOR MICROSTRUCTURE FABRICATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1893 - 1896

[10] IMPROVED UNIFORMITY OF IMPLANTED DOSE BY A COMPENSATED SCAN PATTERN GENERATOR [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1981, 189 (01): : 311 - 318

[1] Blunt R. T., 1983, Ion Implantation: Equipment and Techniques. Proceedings of the Fourth International Conference, P443

[2] PLANAR CHANNELING EFFECTS IN SI(100) [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 6 (1-2) : 336 - 348

[3] A TECHNIQUE FOR OPTIMIZING THE DOSE UNIFORMITY OF A MAGNETIC SCANNING HIGH-CURRENT IMPLANTER [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 6 (1-2) : 228 - 236

[4] APPLICATIONS OF MAGNETIC SCANNING TO HIGH-CURRENT IMPLANTATION [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (02) : 1747 - 1750

[5] PERFORMANCE-CHARACTERISTICS OF THE EXTRION 160-10 ION-IMPLANTATION SYSTEM [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 6 (1-2) : 16 - 26

[6] CHANNELING EFFECT OF LOW-ENERGY BORON IMPLANT IN (100) SILICON [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (03) : 59 - 62

[7] CHANNELING IN LOW-ENERGY BORON ION-IMPLANTATION [J]. APPLIED PHYSICS LETTERS, 1984, 44 (04) : 404 - 406

[8] INCIDENCE ANGLE DEPENDENCE OF PLANAR CHANNELING IN BORON ION-IMPLANTATION INTO SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : 716 - 719

[9] CONSIDERATIONS OF ION CHANNELING FOR SEMICONDUCTOR MICROSTRUCTURE FABRICATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1893 - 1896

[10] IMPROVED UNIFORMITY OF IMPLANTED DOSE BY A COMPENSATED SCAN PATTERN GENERATOR [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1981, 189 (01): : 311 - 318