CHANNELING IN LOW-ENERGY BORON ION-IMPLANTATION

被引：79

作者：

MICHEL, AE ^{[1
]}

KASTL, RH ^{[1
]}

MADER, SR ^{[1
]}

MASTERS, BJ ^{[1
]}

GARDNER, JA ^{[1
]}

机构：

[1] IBM CORP,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533

来源：

关键词：

D O I：

10.1063/1.94790

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：404 / 406

页数：3

共 6 条

[1]

CROWDER BL, 1973, ION IMPLANTATION SEM, P257

[2] CHANNELING EFFECT OF LOW-ENERGY BORON IMPLANT IN (100) SILICON [J].

LIU, TM ;

OLDHAM, WG .

[3]

Morgan D V, 1973, CHANNELING

[4] ALIGNMENT EFFECTS ON IMPLANTATION PROFILES IN SILICON [J].

MYERS, DR ;

WILSON, RG .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 47 (1-4) :91-94

WACH, W ;

WITTMAACK, K .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 194 (1-3) :113-116

[6]

ZIEGLER JF, 1983, STOPPING RANGES IONS, V1