ALIGNMENT EFFECTS ON IMPLANTATION PROFILES IN SILICON

被引：5

作者：

MYERS, DR ^{[1
]}

WILSON, RG ^{[1
]}

机构：

[1] HUGHES RES LABS,MALIBU,CA 90265

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1980年 / 47卷 / 1-4期

关键词：

D O I：

10.1080/00337578008209193

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：91 / 94

页数：4

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[7] ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS IN SILICON BY DIFFERENTIAL CAPACITANCE TECHNIQUE [J].

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[10]

WILSON RG, 1978, NBS40049 SPEC PUBL

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