PLANAR CHANNELING EFFECTS IN SI(100)

被引：31

作者：

CURRENT, MI

TURNER, NL

SMITH, TC

CRANE, D

机构：

[1] VARIAN ASSOCIATES,DIV EXTR,GLOUCESTER,MA

[2] TRILOGY SYST CORP,CUPERTINO,CA

[3] MOTOROLA INC,MOS GRP,MESA,AZ

[4] SPERRY CORP,EAGAN,MN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1985年 / 6卷 / 1-2期

关键词：

D O I：

10.1016/0168-583X(85)90655-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：336 / 348

页数：13

共 33 条

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MASZARA, W ;

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LIU, J ;

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WILSON, RG .

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[6] SI(001) SURFACE STUDIES USING HIGH-ENERGY ION-SCATTERING [J].

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NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3) :589-593

[7] CHANNELED-ION IMPLANTATION OF GROUP-III AND GROUP-V IONS INTO SILICON [J].

FURUYA, T ;

NISHI, H ;

INADA, T ;

SAKURAI, T .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3918-3921

[8]

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[9] BEAM SCANNING - ELECTROSTATIC [J].

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RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1979, 44 (1-4) :71-80

[10]

KIRBY B, 1983, OCT YIELD ASS SEM SU

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