CHANNELED-ION IMPLANTATION OF GROUP-III AND GROUP-V IONS INTO SILICON

被引：24

作者：

FURUYA, T

NISHI, H

INADA, T

SAKURAI, T

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 07期

关键词：

D O I：

10.1063/1.325399

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3918 / 3921

页数：4

共 11 条

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[8]

NISHI H, UNPUBLISHED

[9] CHANNELING AND DECHANNELING OF ION-IMPLANTED PHOSPHORUS IN SILICON [J].

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[10]

SEIDEL TE, 1971, 2 P INT C ION IMPL S, P47

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