CHANNELING OF BORON IONS INTO SILICON

被引:13
作者
LECROSNIER, D [1 ]
PAUGAM, J [1 ]
GALLOU, J [1 ]
机构
[1] CTR NATL ETUD TELECOMMUN,LANNION,FRANCE
关键词
D O I
10.1063/1.89384
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:323 / 325
页数:3
相关论文
共 9 条
[1]   LOCATION OF SHOULDERS IN CHANNELING PHENOMENA [J].
BARRETT, JH .
PHYSICAL REVIEW, 1968, 166 (02) :219-&
[2]   PERIPHERAL AND DIFFUSED LAYER EFFECTS ON DOPING PROFILES [J].
BUEHLER, MG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (11) :1171-+
[3]   DIODE EDGE EFFECT ON DOPING-PROFILE MEASUREMENTS [J].
COPELAND, JA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (05) :404-&
[4]  
DATZ S, 1973, CHANNELING THEORY OB, P153
[5]   CHANNELING OF MEDIUM-MASS IONS THROUGH SILICON [J].
EISEN, FH .
CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :561-&
[6]  
FIRSOV OB, 1959, SOV PHYS JETP, V36, P1076
[7]   CHARGE EXCHANGE CROSS SECTIONS FOR ELECTRON LOSS FROM B+, P+, AND N+ ON N2 [J].
MOLINE, RA .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (06) :2471-&
[8]   CHANNELING AND DECHANNELING OF ION-IMPLANTED PHOSPHORUS IN SILICON [J].
REDDI, VGK ;
SANSBURY, JD .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) :2951-2963
[9]  
SEIDEL TE, 1971, 2 INT C ION IMPL SEM