CHANNELING AND RANDOM EQUIVALENT DEPTH DISTRIBUTIONS OF 150 KEV LI, BE, AND B IMPLANTED IN SI

被引：24

作者：

COMAS, J ^{[1
]}

WILSON, RG ^{[1
]}

机构：

[1] HUGHES RES LABS,MALIBU,CA 90265

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 07期

关键词：

D O I：

10.1063/1.328154

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3697 / 3701

页数：5

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