DIFFUSION STUDIES OF BE-IMPLANTED GAAS BY SIMS AND ELECTRICAL PROFILING

被引：32

作者：

MCLEVIGE, WV

VAIDYANATHAN, KV

STREETMAN, BG

COMAS, J

PLEW, L

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[3] USN,WEAP SUPPORT CTR,CRANE,IN 47522

[4] NAVAL RES LAB,WASHINGTON,DC 20375

来源：

关键词：

D O I：

10.1016/0038-1098(78)90893-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1003 / 1008

页数：6

共 26 条

[1] AHRENKIEL RK, 1976, 1976 IEDM TECHNICAL, P426
[2] LATERAL DIFFUSION OF ZINC AND TIN IN GALLIUM-ARSENIDE
BALIGA, BJ
GHANDHI, SK
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (07) : 410 - 415
[3] Barrowcliff E. E., 1977, 1977 International Electron Devices Meeting, P559, DOI 10.1109/IEDM.1977.189319
[4] Casey H.C., 1973, ATOMIC DIFFUSION SEM, P351
[5] Chatterjee P. K., 1975, 1975 International Electron Devices Meeting. (Technical digest), P187, DOI 10.1109/IEDM.1975.188855
[6] PHOTOLUMINESCENCE FROM BE-IMPLANTED GAAS
CHATTERJEE, PK
VAIDYANATHAN, KV
MCLEVIGE, WV
STREETMAN, BG
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (10) : 567 - 569
[7] TEMPERATURE-DEPENDENCE OF PHOTOLUMINESCENCE FROM BE-IMPLANTED GAAS
CHATTERJEE, PK
MCLEVIGE, WV
VAIDYANATHAN, KV
STREETMAN, BG
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (09) : 509 - 512
[8] REDUCED LATERAL DIFFUSION AND REVERSE LEAKAGE IN BE-IMPLANTED GAAS1-XPX DIODES
CHATTERJEE, PK
STREETMAN, BG
[J]. SOLID-STATE ELECTRONICS, 1977, 20 (04) : 305 - &
[9] BERYLLIUM AND SULFUR ION-IMPLANTED PROFILES IN GAAS+
COMAS, J
PLEW, L
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (02) : 209 - 221
[10] COMAS J, 1976, ION IMPLANTATION SEM, P141