REDUCED LATERAL DIFFUSION AND REVERSE LEAKAGE IN BE-IMPLANTED GAAS1-XPX DIODES

被引：13

作者：

CHATTERJEE, PK ^{[1
]}

STREETMAN, BG ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,COORDINATED SCI LAB,URBANA,IL 61801

来源：

关键词：

D O I：

10.1016/0038-1101(77)90112-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：305 / &

共 9 条

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[2] Chatterjee P. K., 1975, 1975 International Electron Devices Meeting. (Technical digest), P187, DOI 10.1109/IEDM.1975.188855
[3] CHATTERJEE PK, 1976, THESIS U ILLINOIS
[4] CHATTERJEE PK, ADAO25607 REP
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[6] UNIFORM-CARRIER-CONCENTRATION PARA-TYPE LAYERS IN GAAS PRODUCED BY BERYLLIUM ION-IMPLANTATION
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[7] OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE
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[J]. APPLIED PHYSICS LETTERS, 1970, 17 (08) : 332 - +
[8] ANNEAL BEHAVIOR OF DEFECTS IN ION-IMPLANTED GAAS DIODES
HUNSPERGER, RG
MARSH, OJ
[J]. METALLURGICAL TRANSACTIONS, 1970, 1 (03): : 603 - +
[9] EXPERIMENTAL FABRICATION OF ONE-DIMENSIONAL GAAS LASER ARRAYS
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