ANNEAL BEHAVIOR OF DEFECTS IN ION-IMPLANTED GAAS DIODES

[1] EFFICIENT DOPING OF GAAS BY SE+ ION IMPLANTATION [J]. APPLIED PHYSICS LETTERS, 1969, 14 (12) : 372 - &

[2] GOLDSTEIN B, 1962, COMPOUND SEMICONDUCT, V1, P347

[3] OHMIC CONTACTS TO SOLUTION-GROWN GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4575 - &

[4] ELECTRICAL PROPERTIES OF ZINC AND CADMIUM ION IMPLANTED LAYERS IN GALLIUM ARSENIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (04) : 488 - &

[5] PRESENCE OF DEEP LEVELS IN ION IMPLANTED JUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1968, 13 (09) : 295 - +

[6] EFFECT OF HEAT TREATMENT ON PHOTOLUMINESCENCE OF TE DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (04) : 1983 - &

[7] ITOH T, 1968, PRIVATE COMMUNICATIO

[8] KELLETT C, 1966, AFCRL66367 ION PHYS

[9] LUMINESCENCE IN SILICON-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) : 2006 - &

[10] ZN AND TE IMPLANTATIONS INTO GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (04) : 1975 - +

[1] EFFICIENT DOPING OF GAAS BY SE+ ION IMPLANTATION [J]. APPLIED PHYSICS LETTERS, 1969, 14 (12) : 372 - &

[2] GOLDSTEIN B, 1962, COMPOUND SEMICONDUCT, V1, P347

[3] OHMIC CONTACTS TO SOLUTION-GROWN GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4575 - &

[4] ELECTRICAL PROPERTIES OF ZINC AND CADMIUM ION IMPLANTED LAYERS IN GALLIUM ARSENIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (04) : 488 - &

[5] PRESENCE OF DEEP LEVELS IN ION IMPLANTED JUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1968, 13 (09) : 295 - +

[6] EFFECT OF HEAT TREATMENT ON PHOTOLUMINESCENCE OF TE DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (04) : 1983 - &

[7] ITOH T, 1968, PRIVATE COMMUNICATIO

[8] KELLETT C, 1966, AFCRL66367 ION PHYS

[9] LUMINESCENCE IN SILICON-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) : 2006 - &

[10] ZN AND TE IMPLANTATIONS INTO GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (04) : 1975 - +