INCIDENCE ANGLE DEPENDENCE OF PLANAR CHANNELING IN BORON ION-IMPLANTATION INTO SILICON

被引：13

作者：

MIYAKE, M

YOSHIZAWA, M

HARADA, H

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 03期

关键词：

D O I：

10.1149/1.2119789

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：716 / 719

页数：4

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