SILICON IMPURITY DISTRIBUTION AS REVEALED BY PULSED MOS C-V MEASUREMENTS

被引：99

作者：

VANGELDER, W

NICOLLIAN, EH

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1971年 / 118卷 / 01期

关键词：

D O I：

10.1149/1.2407927

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：138 / +

页数：1

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[1] AMRON I, 1964, ELECTROCHEM TECHNOL, V12, P327
[2] A TECHNIQUE FOR DIRECTLY PLOTTING INVERSE DOPING PROFILE OF SEMICONDUCTOR WAFERS
COPELAND, JA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (05) : 445 - &
[3] OBSERVATION OF IMPURITY REDUSTRIBUTION DURING THERMAL OXIDATION OF SILICON USING MOS STRUCTURE
DEAL, BE
GROVE, AS
SNOW, EH
SAH, CT
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (03) : 308 - &
[4] MEASUREMENT OF EPITAXIAL DOPING DENSITY VS DEPTH
DECKER, DR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (10) : 1085 - +
[5] EVIDENCE OF PHOSPHORUS N-SKIN ON SILICON FROM VAPOR TRANSPORT
EDWARDS, JR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (06) : 866 - &
[6] MOS AVALANCHE AND TUNNELING EFFECTS IN SILICON SURFACES
GOETZBERGER, A
NICOLLIA.FH
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (12) : 4582 - +
[7] Grove A S, 1967, PHYS TECHNOLOGY SEMI
[8] REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON
GROVE, AS
SAH, CT
LEISTIKO, O
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) : 2695 - &
[9] GUPTA DC, 1967, P IEEE
[10] HILIBRAND J, 1960, RCA REV, V21, P245