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SILICON IMPURITY DISTRIBUTION AS REVEALED BY PULSED MOS C-V MEASUREMENTS
被引:99
作者
:
VANGELDER, W
论文数:
0
引用数:
0
h-index:
0
VANGELDER, W
NICOLLIAN, EH
论文数:
0
引用数:
0
h-index:
0
NICOLLIAN, EH
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1971年
/ 118卷
/ 01期
关键词
:
D O I
:
10.1149/1.2407927
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:138 / +
页数:1
相关论文
共 15 条
[1]
AMRON I, 1964, ELECTROCHEM TECHNOL, V12, P327
[2]
A TECHNIQUE FOR DIRECTLY PLOTTING INVERSE DOPING PROFILE OF SEMICONDUCTOR WAFERS
COPELAND, JA
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories, Inc., N. J, Murray Hill
COPELAND, JA
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1969,
ED16
(05)
: 445
-
&
[3]
OBSERVATION OF IMPURITY REDUSTRIBUTION DURING THERMAL OXIDATION OF SILICON USING MOS STRUCTURE
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
SNOW, EH
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1965,
112
(03)
: 308
-
&
[4]
MEASUREMENT OF EPITAXIAL DOPING DENSITY VS DEPTH
DECKER, DR
论文数:
0
引用数:
0
h-index:
0
DECKER, DR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(10)
: 1085
-
+
[5]
EVIDENCE OF PHOSPHORUS N-SKIN ON SILICON FROM VAPOR TRANSPORT
EDWARDS, JR
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering and Materials Research Laboratory, University of Illinois, Urbana, Illinois
EDWARDS, JR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(06)
: 866
-
&
[6]
MOS AVALANCHE AND TUNNELING EFFECTS IN SILICON SURFACES
GOETZBERGER, A
论文数:
0
引用数:
0
h-index:
0
GOETZBERGER, A
NICOLLIA.FH
论文数:
0
引用数:
0
h-index:
0
NICOLLIA.FH
[J].
JOURNAL OF APPLIED PHYSICS,
1967,
38
(12)
: 4582
-
+
[7]
Grove A S, 1967, PHYS TECHNOLOGY SEMI
[8]
REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
LEISTIKO, O
论文数:
0
引用数:
0
h-index:
0
LEISTIKO, O
[J].
JOURNAL OF APPLIED PHYSICS,
1964,
35
(09)
: 2695
-
&
[9]
GUPTA DC, 1967, P IEEE
[10]
HILIBRAND J, 1960, RCA REV, V21, P245
←
1
2
→
共 15 条
[1]
AMRON I, 1964, ELECTROCHEM TECHNOL, V12, P327
[2]
A TECHNIQUE FOR DIRECTLY PLOTTING INVERSE DOPING PROFILE OF SEMICONDUCTOR WAFERS
COPELAND, JA
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories, Inc., N. J, Murray Hill
COPELAND, JA
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1969,
ED16
(05)
: 445
-
&
[3]
OBSERVATION OF IMPURITY REDUSTRIBUTION DURING THERMAL OXIDATION OF SILICON USING MOS STRUCTURE
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
SNOW, EH
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1965,
112
(03)
: 308
-
&
[4]
MEASUREMENT OF EPITAXIAL DOPING DENSITY VS DEPTH
DECKER, DR
论文数:
0
引用数:
0
h-index:
0
DECKER, DR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(10)
: 1085
-
+
[5]
EVIDENCE OF PHOSPHORUS N-SKIN ON SILICON FROM VAPOR TRANSPORT
EDWARDS, JR
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering and Materials Research Laboratory, University of Illinois, Urbana, Illinois
EDWARDS, JR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(06)
: 866
-
&
[6]
MOS AVALANCHE AND TUNNELING EFFECTS IN SILICON SURFACES
GOETZBERGER, A
论文数:
0
引用数:
0
h-index:
0
GOETZBERGER, A
NICOLLIA.FH
论文数:
0
引用数:
0
h-index:
0
NICOLLIA.FH
[J].
JOURNAL OF APPLIED PHYSICS,
1967,
38
(12)
: 4582
-
+
[7]
Grove A S, 1967, PHYS TECHNOLOGY SEMI
[8]
REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
LEISTIKO, O
论文数:
0
引用数:
0
h-index:
0
LEISTIKO, O
[J].
JOURNAL OF APPLIED PHYSICS,
1964,
35
(09)
: 2695
-
&
[9]
GUPTA DC, 1967, P IEEE
[10]
HILIBRAND J, 1960, RCA REV, V21, P245
←
1
2
→