EVIDENCE OF PHOSPHORUS N-SKIN ON SILICON FROM VAPOR TRANSPORT

被引：2

作者：

EDWARDS, JR

机构：

[1] Department of Electrical Engineering and Materials Research Laboratory, University of Illinois, Urbana, Illinois

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1969年 / 116卷 / 06期

关键词：

D O I：

10.1149/1.2412082

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

[No abstract available]

引用

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页码：866 / &

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