CONSIDERATIONS OF ION CHANNELING FOR SEMICONDUCTOR MICROSTRUCTURE FABRICATION

被引：12

作者：

MYERS, DR

WILSON, RG

COMAS, J

机构：

[1] HUGHES RES LABS,MALIBU,CA 90265

[2] USN,RES LAB,WASHINGTON,DC 20375

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 06期

关键词：

D O I：

10.1116/1.570322

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1893 / 1896

页数：4

相关论文

共 29 条

[1] AN EXPERIMENTAL STUDY ON ORIENTATION DEPENDENCE OF (P,GAMMA) YIELDS IN MONOCRYSTALLINE ALUMINUM
ANDERSEN, JU
DAVIES, JA
NIELSEN, KO
ANDERSEN, SL
[J]. NUCLEAR INSTRUMENTS & METHODS, 1965, 38 (DEC): : 210 - &
[2] SUB-THRESHOLD BEHAVIOR OF UNIFORMLY AND NONUNIFORMLY DOPED LONG-CHANNEL MOSFET
BREWS, JR
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (09) : 1282 - 1291
[3] BREWS JR, UNPUBLISHED
[4] BRICE DK, 1971, SCPR710599 SAND LAB
[5] MICROWAVE TRANSISTORS - THEORY AND DESIGN
COOKE, HF
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (08): : 1163 - +
[6] COMPLEMENTARY MOS 1.2 VOLT WATCH CIRCUIT USING ION IMPLANTATION
COPPEN, PJ
BAUER, LO
AUBUCHON, KG
MOYER, NE
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 165 - &
[7] HOT-ELECTRON EMISSION IN N-CHANNEL IGFETS
COTTRELL, PE
TROUTMAN, RR
NING, TH
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 520 - 533
[8] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS
DENNARD, RH
GAENSSLEN, FH
YU, HN
RIDEOUT, VL
BASSOUS, E
LEBLANC, AR
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268
[9] CHANNELING AND RELATED EFFECTS IN MOTION OF CHARGED-PARTICLES THROUGH CRYSTALS
GEMMELL, DS
[J]. REVIEWS OF MODERN PHYSICS, 1974, 46 (01) : 129 - 227
[10] BIPOLAR HIGH-SPEED LOW-POWER GATES WITH DOUBLE IMPLANTED TRANSISTORS
GRAUL, J
KAISER, H
WILHELM, WJ
RYSSEL, H
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1975, 10 (04) : 201 - 204