BIPOLAR HIGH-SPEED LOW-POWER GATES WITH DOUBLE IMPLANTED TRANSISTORS

被引：12

作者：

GRAUL, J

KAISER, H

WILHELM, WJ

RYSSEL, H

机构：

[1] SIEMENS AG,MUNICH,FED REP GER

[2] INST FESTKORPER TECHNOL,MUNICH,FED REP GER

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1975年 / 10卷 / 04期

关键词：

D O I：

10.1109/JSSC.1975.1050594

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：201 / 204

页数：4

共 13 条

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[3]

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EBERS, JJ ;

MOLL, JL .

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[5]

EVANS WI, 1973, IEEE INT SOLID STATE, P174

[6] OXIDE-ISOLATED MONOLITHIC TECHNOLOGY AND APPLICATIONS [J].

EVANS, WJ ;

TRETOLA, AR ;

PAYNE, RS ;

OLMSTEAD, ML ;

SPEENEY, DV .

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[7]

GRAUL J, 1974, 6TH INT C MICR MUN

[8]

GUMMEL HK, 1961, P IRE, V49, P834

[9] FULLY ION-IMPLANTED BIPOLAR-TRANSISTORS [J].

PAYNE, RS ;

SCAVUZZO, RJ ;

OLSON, KH ;

NACCI, JM ;

MOLINE, RA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (04) :273-278

[10]

PELTZER D, 1971, ELECTRONICS 0301, P52

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