LOW-NOISE IMPLANTED-BASE MICROWAVE TRANSISTORS

被引：12

作者：

ARCHER, JA ^{[1
]}

机构：

[1] FAIRCHILD CAMERA & INSTR CORP,4001 MIRANDA AVE,PALO ALTO,CA 94304

来源：

关键词：

D O I：

10.1016/0038-1101(74)90130-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：387 / 393

页数：7

共 7 条

[1] IMPROVED MICROWAVE-TRANSISTOR STRUCTURE [J].

ARCHER, JA .

[2]

GOVER A, 1972, T IEEE ELECTRON DEVI, VED19, P967

[3] SIMPLIFIED APPROACH TO NOISE IN MICROWAVE TRANSISTORS [J].

MALAVIYA, SD ;

VANDERZI.A .

[4] POTENTIAL DISTRIBUTION AND CAPACITANCE OF A GRADED P-N JUNCTION [J].

MORGAN, SP ;

SMITS, FM .

BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (06) :1573-1602

[5]

REDDI VGK, 1972, SOLID STATE TECH OCT

[6]

SEIDEL TE, 1971, ION IMPLANTATION SEM

[7] CHARACTERIZATION OF MICROWAVE TRANSISTORS [J].

WHITE, MH ;

THURSTON, MO .