DETERMINATION OF LOW-DOSE BORON IMPLANTED CONCENTRATION PROFILES IN SILICON BY (N,ALPHA) REACTION

被引：20

作者：

MULLER, K

HENKELMANN, R

BOROFFKA, H

机构：

[1] TECH UNIV MUNICH,INST RADIOCHEM,GARCHING,FED REP GER

[2] SIEMENS AG,FORSCH LAB,MUNICH,FED REP GER

来源：

NUCLEAR INSTRUMENTS & METHODS | 1975年 / 129卷 / 02期

关键词：

D O I：

10.1016/0029-554X(75)90751-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

收藏

页码：557 / 559

页数：3

相关论文

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