MEASUREMENT OF BORON DISTRIBUTION IN B-10-IMPLANTED SILICON BY (N,ALPHA) NUCLEAR-REACTION

被引：10

作者：

MEZEY, G

SZOKEFAL.Z

BADINKA, C

机构：

[1] CENTR RES INST PHYS,BUDAPEST,HUNGARY

[2] HUNGARIAN ACAD SCI,BIOL RES CTR,INST BIOPHYS,SZEGED,HUNGARY

来源：

THIN SOLID FILMS | 1973年 / 19卷 / 01期

关键词：

D O I：

10.1016/0040-6090(73)90034-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：173 / 175

页数：3

相关论文

共 6 条

[1] MECHANISM OF ANODIC OXIDATION
AMSEL, G
SAMUEL, D
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (DEC) : 1707 - &
[2] CARPENTER BS, 1970, NBS548 TECH NOT, P88
[3] QUANTITATIVE ANALYSIS OF BORON IN SOLIDS BY AUTORADIOGRAPHY
GARNISH, JD
HUGHES, JDH
[J]. JOURNAL OF MATERIALS SCIENCE, 1972, 7 (01) : 7 - &
[4] MULLER H, 1971, 2 INT C ION IMPL SEM, P85
[5] APPLICATION OF SOLID-STATE TRACK DETECTORS FOR MEASURING ANGULAR DISTRIBUTIONS OF ALPHA-PARTICLE GROUPS FROM NUCLEAR REACTIONS
SOMOGYI, G
SCHLENK, B
VARNAGY, M
MESKO, L
VALEK, A
[J]. NUCLEAR INSTRUMENTS & METHODS, 1968, 63 (02): : 189 - &
[6] BORON ATOM DISTRIBUTIONS IN IONS-IMPLANTED SILICON BY (N,HE-4) NUCLEAR-REACTION
ZIEGLER, JF
BAGLIN, JEE
MASTERS, BJ
CROWDER, BL
COLE, GW
[J]. APPLIED PHYSICS LETTERS, 1972, 21 (01) : 16 - &