SPECIFIC ENERGY-LOSS OF HE-4 IONS IN SILICON (AMORPHOUS, POLYCRYSTALLINE, AND SINGLE-CRYSTAL)

[1] Bichsel H., 1967, Nuclear Data, Section A, V3, P343, DOI 10.1016/0550-306X(67)80006-5

[2] RELATIONS BETWEEN STRUCTURE AND OPTICAL AND ELECTRICAL PROPERTIES OF AMORPHOUS SI AND GE FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (01): : 125 - &

[3] DENSITIES OF AMORPHOUS SI FILMS BY NUCLEAR BACKSCATTERING [J]. APPLIED PHYSICS LETTERS, 1972, 21 (07) : 305 - &

[4] ALPHA-PARTICLE STOPPING CROSS SECTION IN SOLIDS FROM 400 KEV TO 2 MEV [J]. PHYSICAL REVIEW, 1969, 187 (02): : 478 - &

[5] CORRECTION [J]. PHYSICAL REVIEW B, 1970, 2 (03): : 781 - &

[6] ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (05) : 205 - &

[7] DELLAMEA G, 1971, PHYS REV LETT, V27, P1194

[8] Eisen F.H., 1972, RADIAT EFF, V13, P93, DOI [10.1080/00337577208231165, DOI 10.1080/00337577208231165]

[9] FANO V, 1963, ANN REV SCI, V13, P1

[10] HEAVENS OS, 1965, OPTICAL PROPERTIES, P105

[1] Bichsel H., 1967, Nuclear Data, Section A, V3, P343, DOI 10.1016/0550-306X(67)80006-5

[2] RELATIONS BETWEEN STRUCTURE AND OPTICAL AND ELECTRICAL PROPERTIES OF AMORPHOUS SI AND GE FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (01): : 125 - &

[3] DENSITIES OF AMORPHOUS SI FILMS BY NUCLEAR BACKSCATTERING [J]. APPLIED PHYSICS LETTERS, 1972, 21 (07) : 305 - &

[4] ALPHA-PARTICLE STOPPING CROSS SECTION IN SOLIDS FROM 400 KEV TO 2 MEV [J]. PHYSICAL REVIEW, 1969, 187 (02): : 478 - &

[5] CORRECTION [J]. PHYSICAL REVIEW B, 1970, 2 (03): : 781 - &

[6] ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (05) : 205 - &

[7] DELLAMEA G, 1971, PHYS REV LETT, V27, P1194

[8] Eisen F.H., 1972, RADIAT EFF, V13, P93, DOI [10.1080/00337577208231165, DOI 10.1080/00337577208231165]

[9] FANO V, 1963, ANN REV SCI, V13, P1

[10] HEAVENS OS, 1965, OPTICAL PROPERTIES, P105