BORON-DIFFUSION IN SILICON

[1] DEPTH DISTRIBUTIONS OF DEFECTS AND IMPURITIES IN 100-KEV B+ ION-IMPLANTED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 220 - 224

[2] VERIFICATION OF MODELS FOR FABRICATION OF ARSENIC SOURCE-DRAINS IN VLSI MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1453 - 1462

[3] BLUE JL, UNPUB NBS SPECIAL PU

[4] A COMPARATIVE-STUDY OF SIMS DEPTH PROFILING OF BORON IN SILICON [J]. SURFACE AND INTERFACE ANALYSIS, 1984, 6 (04) : 162 - 166

[5] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &

[6] INSTRUMENTAL CROSS-CONTAMINATION IN THE CAMECA IMS-3F SECONDARY ION-MICROSCOPE [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 218 (1-3): : 316 - 318

[7] EHRSTEIN JR, 1984, ASTM STP, V850

[8] Fair R. B., 1981, Impurity doping processes in silicon, P315

[9] Fair R. B., 1983, International Electron Devices Meeting 1983. Technical Digest, P658

[10] FAIR RB, 1981, APPLIED SOLID STAT B, V2, P1

[1] DEPTH DISTRIBUTIONS OF DEFECTS AND IMPURITIES IN 100-KEV B+ ION-IMPLANTED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 220 - 224

[2] VERIFICATION OF MODELS FOR FABRICATION OF ARSENIC SOURCE-DRAINS IN VLSI MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1453 - 1462

[3] BLUE JL, UNPUB NBS SPECIAL PU

[4] A COMPARATIVE-STUDY OF SIMS DEPTH PROFILING OF BORON IN SILICON [J]. SURFACE AND INTERFACE ANALYSIS, 1984, 6 (04) : 162 - 166

[5] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &

[6] INSTRUMENTAL CROSS-CONTAMINATION IN THE CAMECA IMS-3F SECONDARY ION-MICROSCOPE [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 218 (1-3): : 316 - 318

[7] EHRSTEIN JR, 1984, ASTM STP, V850

[8] Fair R. B., 1981, Impurity doping processes in silicon, P315

[9] Fair R. B., 1983, International Electron Devices Meeting 1983. Technical Digest, P658

[10] FAIR RB, 1981, APPLIED SOLID STAT B, V2, P1