INTERPRETATION OF PROFILES OBTAINED BY C(V) TECHNIQUE IN PRESENCE OF DEEP TRAPS - APPLICATION TO PROTON IRRADIATED GAAS SAMPLES

被引：13

作者：

LOUALICHE, S

NOUAILHAT, A

GUILLOT, G

机构：

来源：

SOLID-STATE ELECTRONICS | 1982年 / 25卷 / 07期

关键词：

D O I：

10.1016/0038-1101(82)90059-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：577 / 582

页数：6

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