DETERMINATION OF SPATIAL-DISTRIBUTION OF DEEP CENTERS FROM CAPACITANCE MEASUREMENTS OF PN JUNCTIONS

被引:20
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ZOHTA, Y
OHMURA, Y
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10.1063/1.1654295
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O59 [应用物理学];
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页码:117 / +
页数:1
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[1]   DISTRIBUTION OF RADIATION DEFECTS IN SILICON IRRADIATED WITH FAST CHARGED PARTICLES [J].
BULGAKOV, YV ;
KOLOMENSKAYA, TI ;
KUMAKHOV, MA .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 5 (03) :591-+
[2]   A TECHNIQUE FOR DIRECTLY PLOTTING INVERSE DOPING PROFILE OF SEMICONDUCTOR WAFERS [J].
COPELAND, JA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (05) :445-&
[3]  
DAVOUSTSALTIEL E, 1965, RADIATION DAMAGE SEM, P275
[4]   ISOLATION OF JUNCTION DEVICES IN GAAS USING PROTON BOMBARDMENT [J].
FOYT, AG ;
LINDLEY, WT ;
WOLFE, CM ;
DONNELLY, JP .
SOLID-STATE ELECTRONICS, 1969, 12 (04) :209-&
[6]   CAPACITANCE ENERGY LEVEL SPECTROSCOPY OF DEEP-LYING SEMICONDUCTOR IMPURITIES USING SCHOTTKY BARRIERS [J].
ROBERTS, GI ;
CROWELL, CR .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) :1767-+
[7]   LOW-TEMPERATURE HIGH-FREQUENCY CAPACITANCE MEASUREMENTS OF DEEP- AND SHALLOW-LEVEL IMPURITY CENTER CONCENTRATIONS [J].
SAH, CT ;
ROSIER, LL ;
FORBES, L .
APPLIED PHYSICS LETTERS, 1969, 15 (06) :161-+
[8]   FREQUENCY DEPENDENCE OF REVERSE-BIASED CAPACITANCE OF GOLD-DOPED SILICON P+N STEP JUNCTIONS [J].
SAH, CT ;
REDDI, VGK .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) :345-+
[9]   EFFECTS OF DEEP IMPURITIES ON N+P JUNCTION REVERSE-BIASED SMALL-SIGNAL CAPACITANCE [J].
SCHIBLI, E ;
MILNES, AG .
SOLID-STATE ELECTRONICS, 1968, 11 (03) :323-+
[10]   CAPACITANCE MEASUREMENTS ON AU-GAAS SCHOTTKY BARRIERS [J].
SENECHAL, RR ;
BASINSKI, J .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) :4581-+