MAGNETOOPTICAL STUDY OF DONOR-LEVEL CROSSING IN TIPPED GAAS/(GA,AL)AS QUANTUM-WELLS

被引：15

作者：

MUELLER, ER ^{[1
]}

GOODHUE, WD ^{[1
]}

LARSEN, DM ^{[1
]}

BALES, JW ^{[1
]}

WALDMAN, J ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.44.1754

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present evidence for an anticrossing between the 2p + 1 and 2p0 levels of Si donors situated near the center of a GaAs quantum well. This anticrossing, which does not appear for magnetic fields perpendicular to the plane of the sample, is induced by tipping the sample normal away from the direction of the applied magnetic field. All donor transitions were detected with photoconductivity, a method that is standard for GaAs bulk donors but has only recently been employed successfully for donors in quantum wells.

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页码：1754 / 1761

页数：8

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