THE DIFFUSION OF HEAVY ALKALI ATOMS IN AMORPHOUS-SILICON

[1] ABELES B, 1975, ADV PHYS, V24, P407, DOI 10.1080/00018737500101431

[2] INTERSTITIAL DOPING OF AMORPHOUS SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (12) : 850 - 852

[3] BOLTAKS BI, 1963, DIFFUSION SEMICONDUC, P235

[4] CARLSON DE, 1977, RCA REV, V38, P211

[5] SIMS ANALYSIS OF DEUTERIUM DIFFUSION IN HYDROGENATED AMORPHOUS SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 33 (01) : 81 - 83

[6] FREQUENCY FACTOR AND ACTIVATION ENERGY FOR THE VOLUME DIFFUSION OF METALS [J]. JOURNAL OF APPLIED PHYSICS, 1950, 21 (11) : 1189 - 1192

[7] GAUS H, 1968, Z NATURFORSCH PT A, VA 23, P985

[8] GIBSON RA, 1981, J PHYS-PARIS, V42, P1143

[9] KALBITZER S, 1976, 4TH P C SCI IND APPL, P403

[10] Matzke Hj., 1969, Radiation Effects, V2, P11, DOI 10.1080/00337576908235574

[1] ABELES B, 1975, ADV PHYS, V24, P407, DOI 10.1080/00018737500101431

[2] INTERSTITIAL DOPING OF AMORPHOUS SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (12) : 850 - 852

[3] BOLTAKS BI, 1963, DIFFUSION SEMICONDUC, P235

[4] CARLSON DE, 1977, RCA REV, V38, P211

[5] SIMS ANALYSIS OF DEUTERIUM DIFFUSION IN HYDROGENATED AMORPHOUS SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 33 (01) : 81 - 83

[6] FREQUENCY FACTOR AND ACTIVATION ENERGY FOR THE VOLUME DIFFUSION OF METALS [J]. JOURNAL OF APPLIED PHYSICS, 1950, 21 (11) : 1189 - 1192

[7] GAUS H, 1968, Z NATURFORSCH PT A, VA 23, P985

[8] GIBSON RA, 1981, J PHYS-PARIS, V42, P1143

[9] KALBITZER S, 1976, 4TH P C SCI IND APPL, P403

[10] Matzke Hj., 1969, Radiation Effects, V2, P11, DOI 10.1080/00337576908235574