INTERSTITIAL DOPING OF AMORPHOUS SILICON

[1] EXCITATION SPECTRA OF LITHIUM DONORS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1965, 138 (3A): : A882 - &

[2] INFLUENCE OF ION-IMPLANTATION ON ELECTRICAL PROPERTIES OF AMORPHOUS-GE AND SI [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 30 (01): : 231 - 240

[3] BEYER W, 1977, COMMUN PHYS, V2, P121

[4] BEYER W, 1977, 7TH P INT C AM LIQ S

[5] PREPARATION AND PROPERTIES OF AMORPHOUS SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (01) : 77 - &

[6] DIFFUSION OF LITHIUM INTO GERMANIUM AND SILICON [J]. PHYSICAL REVIEW, 1953, 91 (01): : 193 - 193

[7] ELECTRICAL AND PHYSICAL MEASUREMENTS ON SILICON IMPLANTED WITH CHANNELED AND NONCHANNELED DOPANT IONS [J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 675 - +

[8] Mayer J. W., 1970, ION IMPLANTATION SEM

[9] MULLER G, 1977, 7TH P INT C AM LIQ S

[10] DOPING, SCHOTTKY-BARRIER AND P-N-JUNCTION FORMATION IN AMORPHOUS-GERMANIUM AND SILICON BY RF SPUTTERING [J]. SOLID STATE COMMUNICATIONS, 1976, 20 (10) : 969 - 972

[1] EXCITATION SPECTRA OF LITHIUM DONORS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1965, 138 (3A): : A882 - &

[2] INFLUENCE OF ION-IMPLANTATION ON ELECTRICAL PROPERTIES OF AMORPHOUS-GE AND SI [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 30 (01): : 231 - 240

[3] BEYER W, 1977, COMMUN PHYS, V2, P121

[4] BEYER W, 1977, 7TH P INT C AM LIQ S

[5] PREPARATION AND PROPERTIES OF AMORPHOUS SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (01) : 77 - &

[6] DIFFUSION OF LITHIUM INTO GERMANIUM AND SILICON [J]. PHYSICAL REVIEW, 1953, 91 (01): : 193 - 193

[7] ELECTRICAL AND PHYSICAL MEASUREMENTS ON SILICON IMPLANTED WITH CHANNELED AND NONCHANNELED DOPANT IONS [J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 675 - +

[8] Mayer J. W., 1970, ION IMPLANTATION SEM

[9] MULLER G, 1977, 7TH P INT C AM LIQ S

[10] DOPING, SCHOTTKY-BARRIER AND P-N-JUNCTION FORMATION IN AMORPHOUS-GERMANIUM AND SILICON BY RF SPUTTERING [J]. SOLID STATE COMMUNICATIONS, 1976, 20 (10) : 969 - 972