INFLUENCE OF ION-IMPLANTATION ON ELECTRICAL PROPERTIES OF AMORPHOUS-GE AND SI

被引：29

作者：

BEYER, W ^{[1
]}

STUKE, J ^{[1
]}

WAGNER, H ^{[1
]}

机构：

[1] UNIV MARBURG,FACHBEREICH PHYS,MARBURG,FED REP GER

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1975年 / 30卷 / 01期

关键词：

D O I：

10.1002/pssa.2210300124

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：231 / 240

页数：10

共 17 条

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[J]. PHYSICAL REVIEW B, 1970, 1 (06): : 2632 - &
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[J]. PHYSICAL REVIEW LETTERS, 1971, 27 (26) : 1794 - &
[6] PHOTOCONDUCTIVITY STUDIES OF DEFECTS IN SILICON - DIVACANCY-ASSOCIATED ENERGY LEVELS
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CORELLI, JC
[J]. PHYSICAL REVIEW, 1968, 173 (03): : 734 - +
[7] KOZLOV IP, 1973, SOV PHYS SEMICOND+, V6, P1743
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[10] MELL H, 1973, 5TH P INT C AM LIQ S, P203