HOLE SUBBANDS IN STRAINED-QUANTUM-WELL SEMICONDUCTORS IN [HHK] DIRECTIONS

被引:94
作者
FISHMAN, G
机构
[1] Laboratoire de Spectrométrie Physique, Université Joseph Fourier, Centre National de la Recherche Scientifique, 38402 Saint-Martin d'Heres Cedex
来源
PHYSICAL REVIEW B | 1995年 / 52卷 / 15期
关键词
D O I
10.1103/PhysRevB.52.11132
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We give a general formulation for both the Luttinger and the Bir-Pikus Hamiltonians with a spin quantization parallel to the [hhk] direction. This allows one to obtain the hole subbands for any growth direction parallel to [hhk]. The results are given explicitly in the [001], [111], [110], and [112] directions. We show that the axial approximation is exact if the wave vector parallel to the plane (hhk) is equal to zero for (hhk)=(001) (a well-known result) or (111) but that this is not strictly true for (110) or (112). We clarify the link between the axial mass and the cyclotron mass. We then present a method of numerical calculation that is suited to any asymmetric quantum well. We discuss the efficiency and the limits of the Broido-Sham transformation and we show that this transformation is not applicable for the [112] direction even as a rough approximation. Finally, we give the hole subband dispersion in strained Cd1-xMnxTe-CdTe-Cd1-xMnx Te quantum wells where, according to the growth direction, the quantum well may or may not be piezoelectric.
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页码:11132 / 11143
页数:12
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