RESIDUAL STRESSES AT AN OXIDE-SILICON INTERFACE

[1] BULTHUIS K, 1965, PHILIPS RES REP, V20, P415

[2] GLUNG R, 1965, REV SCI INSTR, V36, P7

[3] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (02) : 31 - &

[4] Hetherington G, 1962, PHYS CHEM GLASSES-B, V3, P129

[5] MEASUREMENT OF STRAINS AT SI-SIO2 INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) : 2429 - +

[6] WHELAN MV, 1965, PHILIPS RES REP, V20, P562

[7] WHELAN MV, TO BE PUBLISHED

[8] YOUNGS MODULUS SHEAR MODULUS AND POISSONS RATIO IN SILICON AND GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (01) : 153 - +

[1] BULTHUIS K, 1965, PHILIPS RES REP, V20, P415

[2] GLUNG R, 1965, REV SCI INSTR, V36, P7

[3] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (02) : 31 - &

[4] Hetherington G, 1962, PHYS CHEM GLASSES-B, V3, P129

[5] MEASUREMENT OF STRAINS AT SI-SIO2 INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) : 2429 - +

[6] WHELAN MV, 1965, PHILIPS RES REP, V20, P562

[7] WHELAN MV, TO BE PUBLISHED

[8] YOUNGS MODULUS SHEAR MODULUS AND POISSONS RATIO IN SILICON AND GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (01) : 153 - +