NUCLEATION AND GROWTH OF LI PRECIPITATES IN SI

被引：14

作者：

FERMAN, JW

机构：

来源：

关键词：

D O I：

10.1063/1.1656853

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3771 / &

共 23 条

BENNEMAN, KH .

PHYSICAL REVIEW, 1965, 137 (5A) :1497-+

[2]

BOHM H, 1959, Z METALLKD, V50, P44

[3] INTERSTITIAL VERSUS SUBSTITUTIONAL OXYGEN IN SILICON [J].

BOND, WL ;

KAISER, W .

[4] IMPURITY CENTERS IN GE AND SI [J].

BURTON, JA .

PHYSICA, 1954, 20 (10) :845-854

[5]

DEBOER, 1962, REACTIVITY SOLIDS ED, P264

[6]

FERMAN JW, 1962, REACTIVITY SOLIDS, P264

[7] THEORY OF DIFFUSION-LIMITED PRECIPITATION [J].

HAM, FS .

[8] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

IRVIN, JC .

BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+

[9] INFRARED ABSORPTION AND OXYGEN CONTENT IN SILICON AND GERMANIUM [J].

KAISER, W ;

KECK, PH ;

LANGE, CF .

PHYSICAL REVIEW, 1956, 101 (04) :1264-1268

[10]

MORIN FJ, 1957, J PHYS CHEM SOLIDS, V3, P196