LOCAL FIELD EFFECTS IN STATIC RESPONSE OF ELEMENTAL SEMICONDUCTORS

被引：13

作者：

TURNER, RD

INKSON, JC

机构：

[1] Cavendish Laboratory, Univ. of Cambridge, Cambridge

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1978年 / 11卷 / 13期

关键词：

D O I：

10.1088/0022-3719/11/13/034

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

For practical numerical reasons the inversion of the dielectric matrix of the elemental semiconductors has proved to be a difficult problem. Simplifications to the Wannier function based inversion technique are presented based upon physical models of the semiconductor system. Results have been obtained for the diagonal part of the response function with and without local fields. These are compared to previous theories and a practical scheme for the systematic inclusion of local fields in phonon calculations presented.

引用

页码：2875 / 2883

页数：9

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